Design of Low Power Readout Circuit using FinFET Technology

Abstract

FinFET technology has been born as a result of the relentless increase in the levels of integration. The basic tenet of Moore’s law has held true for many years from the earliest years of integrated circuit technology. Essentially it states that the number of transistors on a given area of silicon doubles every two years. FinFET technology takes its name from the fact that the FET structure used looks like a set of fins when viewed. The FinFET is a technology that is used in IC implementation. FinFETs are not available as discrete devices. However FinFET technology is becoming more widespread as feature sizes within integrated circuits shrink down and there is a growing need to provide very much higher levels of integration with less power consumption. This thesis focuses on design of a capacitive pressure sensor readout circuit using the FinFET technology and comparing it with that based on traditional CMOS technology. FinFET-based design shows less power consumption in the proposed circuits. The first chapter is an introductory chapter for the whole thesis, presenting the main concept and developing the thesis organization. The second chapter gives a background on the sensor used in the thesis. It also present many architectures for the readout circuit allowing to choose a suitable circuit for the proposed readout circuit. A survey on low power techniques is also presented, as it is our main goal in the thesis; designing low power circuits. The third chapter introduces the new FinFET device, it declares the need for a new technology, highlighting the advantages of using FinFET device in next technology generations. The FinFET technology is a good choice for low power circuits.