CRYSTAL GROWTH AND STUDIES OF SOME TERNARY SEMICONDUCTOR COMPOUNDS
Badr Mohammed Ali;
Abstract
The TlGaSe2 single crystal was grown in the solid state laboratory at Aswan by very slow cooling from its melt by a technique, which is related to the Bridgman technique. The product ingot was identified with x-ray analysis. The obtained specimen was
prepared with the desired dimensions for the electrical, optical absorption and for the photoconductivity measurements.
The results obtained can be summarized as following:
prepared with the desired dimensions for the electrical, optical absorption and for the photoconductivity measurements.
The results obtained can be summarized as following:
Other data
| Title | CRYSTAL GROWTH AND STUDIES OF SOME TERNARY SEMICONDUCTOR COMPOUNDS | Other Titles | الانماء البللورى والدراسات العملية لبعض المركبات الشبه موصلة الثلاثية | Authors | Badr Mohammed Ali | Issue Date | 2001 |
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