Improvement of Dielectric Properties and Photoconductivity of Laser Deposited Ferrite Thin Film and Bulk of Cu1+xMxFe2-2xO4; M = (Ge, Li, and Ti); to be used as Optical and Pressure Detector
ALI HASSAN ALI AHMED MAGRABI A. H. Magrabi;
Abstract
The samples under investigation of the general formula Cu1+xMxFe2-2xO4,
M=Ti, Ge, and Li, 0.0 x 0.8 were prepared using the standard ceramic technique. Thin films of different contents by PLD technique were also carried out. FTIR and X – ray diffrac
M=Ti, Ge, and Li, 0.0 x 0.8 were prepared using the standard ceramic technique. Thin films of different contents by PLD technique were also carried out. FTIR and X – ray diffrac
Other data
| Title | Improvement of Dielectric Properties and Photoconductivity of Laser Deposited Ferrite Thin Film and Bulk of Cu1+xMxFe2-2xO4; M = (Ge, Li, and Ti); to be used as Optical and Pressure Detector | Other Titles | تحسين الخواص الكهربية و التوصيلية الضوئية لشريحة من الفريت Cu1+xMxFe2-2xO4; M = (Ge, Li, and Ti), المحضرة بواسطة الترسيب بالليزر بحيث يمكن استخدامه كمجس ضوئى و ضغطى | Authors | ALI HASSAN ALI AHMED MAGRABI A. H. Magrabi | Keywords | Improvement of Dielectric Properties and Photoconductivity of Laser Deposited Ferrite Thin Film and Bulk of Cu1+xMxFe2-2xO4; M = (Ge, Li, and Ti); to be used as Optical and Pressure Detector | Issue Date | 2008 | Description | The samples under investigation of the general formula Cu1+xMxFe2-2xO4, M=Ti, Ge, and Li, 0.0 x 0.8 were prepared using the standard ceramic technique. Thin films of different contents by PLD technique were also carried out. FTIR and X – ray diffrac |
Attached Files
| File | Size | Format | |
|---|---|---|---|
| 78058r1468.pdf | 301.38 kB | Adobe PDF | View/Open |
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