COMPACT MODELING OF RELIABILITY AND QUANTUM EFFECTS FOR DOUBLE GATE MOSFETs (P-DGFETs)
Omnia Samy Shaaban Aly Darwish;
Abstract
Samsung Newsroom, (2016, 30 Aug.), Mass Production of 14 nm Exynos with Full Connectivity Integration [Online], Available: http://www.samsung.com/
[4] H. Lu, “Compact Modeling of Double-Gate MOSFETs,”Ph. D. dissertation, Elect. Eng., Univ. California, San Diego,2009.
[5] H.Baumgart et al., Semiconductor Wafer Bonding: Science, Technology, and Applications VI, Electrochemical Soc., 2001.
[6] T. K. Chiang, “A novel scaling-parameter-dependent subthreshold swing model for double-gate (DG) SOI MOSFETs: Including effective conducting path effect (ECPE),” Semicond. Sci. Technol., vol. 19, no. 12, pp. 1386–1390, 2004.
[7] A. Rahman and M. S. Lundstrom, “A compact scattering model for the nanoscale double-gate MOSFET,” IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 481–489, Mar. 2002.
[8] Y. Taur, “Analytic Solutions of Charge and Capacitance in Symmetric and Asymmetric Double-Gate MOSFETs,” IEEE Trans. Electron Devices, vol. 48, no. 12, pp. 2861–2869, Dec. 2001.
[9] K. Kim, J. G. Fossum, and C. Te Chuang, “Physical compact model for threshold voltage in short-channel double-gate devices,” Int. Conf. Simul. Semicond. Process. Devices, SISPAD, 2003, pp. 223–226
[4] H. Lu, “Compact Modeling of Double-Gate MOSFETs,”Ph. D. dissertation, Elect. Eng., Univ. California, San Diego,2009.
[5] H.Baumgart et al., Semiconductor Wafer Bonding: Science, Technology, and Applications VI, Electrochemical Soc., 2001.
[6] T. K. Chiang, “A novel scaling-parameter-dependent subthreshold swing model for double-gate (DG) SOI MOSFETs: Including effective conducting path effect (ECPE),” Semicond. Sci. Technol., vol. 19, no. 12, pp. 1386–1390, 2004.
[7] A. Rahman and M. S. Lundstrom, “A compact scattering model for the nanoscale double-gate MOSFET,” IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 481–489, Mar. 2002.
[8] Y. Taur, “Analytic Solutions of Charge and Capacitance in Symmetric and Asymmetric Double-Gate MOSFETs,” IEEE Trans. Electron Devices, vol. 48, no. 12, pp. 2861–2869, Dec. 2001.
[9] K. Kim, J. G. Fossum, and C. Te Chuang, “Physical compact model for threshold voltage in short-channel double-gate devices,” Int. Conf. Simul. Semicond. Process. Devices, SISPAD, 2003, pp. 223–226
Other data
| Title | COMPACT MODELING OF RELIABILITY AND QUANTUM EFFECTS FOR DOUBLE GATE MOSFETs (P-DGFETs) | Other Titles | نموذج مدمج للتأثيرت الزمنية والكمية للنبائط الإلكترونية ثنائية الأبواب | Authors | Omnia Samy Shaaban Aly Darwish | Issue Date | 2017 |
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