Dark electrical properties and photovoltaic performance of organic/inorganic (SnPcCl2/p-Si) solar cells

Abstract

A film of SnPcCl2 was deposited by thermal evaporation on p-Si single crystal substrate to fabricate an organic/inorganic n-SnPcCl2/p-Si heterojunction. Electrical properties of the fabricated cell were investigated by performing the measurements of capacitance–voltage (C–V) and current density–voltage (J–V) measurements. The fabricated cell was characterized by a contact barrier of 0.55 eV and a rectification ratio of 229, calculated at ±1 V. The dark J–V measurements suggested that the forward current in this junction involves thermionic mechanisms, while at relatively high applied voltage; a space-charge limited current mechanism was operated. The photovoltaic conversion properties of the junction were also studied by carrying out the I–V measurements under illumination of 100 mW cm−2 and power conversion efficiency of 3.05 % has been achieved. The other cell parameters, the short-circuit current density J sc, the open-circuit voltage V oc and the fill factor FF, were determined at room temperature to be 14.43 mA/cm2, 0.50 V and 0.422 respectively. The temperature-dependence of these parameters was also investigated in the temperature range of 300–380 K.