Electrical and photovoltaic properties of SnSe/Si heterojunction

Abstract

Thin film of SnSe is deposited on n-Si single crystal to fabricate a p-SnSe/n-Si heterojunction photovoltaic cell. Electrical and photoelectrical properties have been studied by the current density-voltage (J-V) and capacitance-voltage (C-V) measurements at different temperatures. The fabricated cell exhibited rectifying characteristics with a rectification ratio of 131 at +/- 1 V. At low voltages (V < 0.55 V), the dark forward current density is controlled by the multi-step tunneling mechanism. While at a relatively high voltage (V > 0.55 V), a space charge-limited-conduction mechanism is observed with trap concentration of 2.3 x 10(21) cm(-3). The C-V measurements showed that the junction is of abrupt nature with built-in voltage of 0.62 V which decreases with temperature by a gradient of 2.83 x 10(-3) V/K. The cell also exhibited strong photovoltaic characteristics with an open-circuit voltage of 425 mV, a short-circuit current density of 17.23 mA cm(-2) and a power conversion efficiency of 6.44%. These parameters have been estimated at room temperature and under light illumination provided by a halogen lamp with an input power density of 50 mW cm(-2).