“Modification of the Electrical Performance of Carbon Nanotube Transistors”

Abstract

Aggressive scaling of silicon metal-oxide-semiconductor field-effect transistor (Si-MOSFET) over different technology generations has led to higher integration density and better performance. With each generation, however, the manufacturing challenges are becoming increasingly difficult. According to the International Technology Roadmap for Semiconductors (ITRS) [1], intensive research needed in order to continue this process and to develop novel devices and methods that will move the technology improvements in other directions. To this end, Carbon nanotubes (CNTs) have emerged as a promising alternative to Si-technology for continued improvements in the density and performance of electronic devices [2, 3]. The demonstration of carbon nanotube field-effect transistors (CNTFETs) in a structure similar to that of conventional Si-MOSFETs suggests that they could play an important role in the future electronic systems [4-6].