Investigations on RF Wireless Power Transfer System

Abstract

As the Schottky barrier diode (SBD) presents the main component in different electronics applications due to its use in semiconductor devices such as microwave photodetectors, transistors, solar cells, gas sensors, lasers, LEDs, and Nano-generators. For energy harvesting and WPT applications. P-N junction and Schottky barrier diodes are the most common zero-bias diodes. Schottky barrier (SB) diodes have a much higher saturation current and quicker switching capabilities, so the zero-bias Schottky barrier diode was more suitable for WPT applications. Lintu et al. [112] constructed Au Schottky diodes on an RF sputtered ZnO thin-film placed on an n-Silicon substrate and investigated their electrical properties using I-V and C-V measurements. With a rectifying ratio of 93, the I-V characteristics reveal the diode's rectifying nature. In [113], Ali-Asghar et al. designed 150 nm thickness, (AZO) thin-films using the reactive DC-magnetron sputtering method in oxygen/argon gases. The temperature-dependent resistivity and the electrical behavior of the AZO/Au structure are compared. As a result, we were able to determine that Au contact is an appropriate electrode for thermoelectric devices, gas sensors, and dye-sensitized solar cells. This chapter presents the construction of a 10 GHz rectifier circuit for wireless power transmission with a thin-film Schottky diode implemented using nanoparticle ink AZO p-type semiconductor with copper tap substrate and silver electrode. 5.2 Ag/AZO/Cu Thin-film Schottky Diode The AZO Schottky diode device shown in Figure 5.1 consists of 3 layers; a commercial copper tape as the flexible substrate, a thin-film of p-type semiconductor nanoparticle-ink AZO (sigma Aldrich 807729 with 2.5 wt. %, viscosity 2.2 cP, work function -4.3 eV), and a silver measuring electrode. The active area of the structure (semiconductor) is 1mm2. The device was implemented in 280nm thickness for the AZO.