Synthesis and characterization g-C3N4-doped PMMA polymeric nanocomposites films for electronic and optoelectronic applications.

Abstract

Solution casting was used to synthesis polymethyl methacrylate (PMMA) nanocomposites with graphitic carbon nitride (g-C3N4) nanoparticles in various percentages (0.033, 0.166, 0.33, 1.665, and 3.3 wt%). XRD patterns confirmed the amorphous nature of PMMA/C3N4 nanocomposites. Optical constants are obtained at room temperature in the 200–2500 nm wavelength range. The optical band gaps of PMMA/C3N4 doped films, both direct and indirect, are measured and have values change from 4.8 to 2.32 eV for Eind g and changes from 5 to 3.7 eV for Edg . The refractive index values of the materials were also calculated using Moss, Reddy, Anani, and Kumar-Singh relationships with average values vary from (2.109 to 2.529) and vary from 2.155 to 2.32 for indirect and direct transition, respectively. The dielectric constant, dielectric loss, and AC electrical conductivity at RT and the g-C3N4 doping level was examined as frequency variables from 100 to 1 MHz. In consideration of Jonscher's universal power law, the variation of σAC with frequency was examined. The addition of C3N4 appears to raise the σAC of the studied films, making them attractive for semiconductor applications. According to the optical limiting results, the samples doped with g-C3N4 are severely attenuated for the laser beam of 638.2 nm. PMMA doped with g-C3N4 is a viable contender for electronic and optoelectronic applications, particularly laser power reduction.