Nature of electrical transport properties of nanocrystalline ZnIn2Se4 thin films

Abstract

© 2016 Elsevier Ltd ZnIn 2 Se 4 thin films were deposited on glass substrates by thermal evaporation technique. Some of ZnIn 2 Se 4 films were annealed under vacuum at 623 K for 2 h. Atomic force microscope (AFM) images were analyzed for as-deposited and annealed films. The roughness degree of the film surface decreased under the influence of annealing. DC Electrical conductivity studied as a function of temperature. Two activation energies were determined that ΔE 1 = 0.44 eV and ΔE 2 = 0.65 eV. Using thermo-electric measurements, the thermoelectric power factor (P), carrier concentration (n) and mobility (μ) were calculated. Current density–voltage characteristics of Al/ZnIn 2 Se 4 /Al sandwich structure were examined. Different mechanisms were obtained; ohmic conduction mechanism at lower voltages and space charge limited conductivity (SCLC) mechanisms at higher voltages.