Simulation of Quantum Transport in Nanoscale Devices
Yasser Mohammed Sabry Gad;
Abstract
Rapid device scaling pushes the dimensions of the field effect transistors to the nanometer regime where quantum effects play an important role in determining the transistor characteristics. The Non-equilibrium Green’s function formalism (NEGF) provides a
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| Title | Simulation of Quantum Transport in Nanoscale Devices | Authors | Yasser Mohammed Sabry Gad | Keywords | Simulation of Quantum Transport in Nanoscale Devices | Issue Date | 2009 | Description | Rapid device scaling pushes the dimensions of the field effect transistors to the nanometer regime where quantum effects play an important role in determining the transistor characteristics. The Non-equilibrium Green’s function formalism (NEGF) provides a |
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