RF MODELING AND CHARACTERIZATION OF DEEP-SUBMICRON MOS TRANSISTORS
Hany Gamal El-Din Mohamed Bakir;
Abstract
The down-scaling of CMOS technology and the shorter channel MOSFETs fabricated on silicon offer ultra-large-scale integration capability, high cut-off frequency (/T) and low noise figures. This makes CMOS the dominant technology used in current RF circuit
Other data
| Title | RF MODELING AND CHARACTERIZATION OF DEEP-SUBMICRON MOS TRANSISTORS | Other Titles | نمذجه وتوصيف ترانزستورات معدن - اكسيد - شبه موصل تحت الميكرونيه العمقيه عند ترددات الراديو | Authors | Hany Gamal El-Din Mohamed Bakir | Keywords | RF MODELING AND CHARACTERIZATION OF DEEP-SUBMICRON MOS TRANSISTORS | Issue Date | 2007 | Description | The down-scaling of CMOS technology and the shorter channel MOSFETs fabricated on silicon offer ultra-large-scale integration capability, high cut-off frequency (/T) and low noise figures. This makes CMOS the dominant technology used in current RF circuit |
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