STUDY OF DIRECT TUNNELING CURRENT THROUGH ULTRA-THIN GATE OXIDE MOSFET AND ITS EEFECT ON CMOS CIRCUITS
MOHAMED ATEF EL-SAYED;
Abstract
ABSTRACT
CMOS technology dimensions are being scaled down to enhance device performance. Enhanced performance includes fast switching speed, low power dissipation and smaller area . MOSFET has suffered from various undesirable effects as its dimensions be
CMOS technology dimensions are being scaled down to enhance device performance. Enhanced performance includes fast switching speed, low power dissipation and smaller area . MOSFET has suffered from various undesirable effects as its dimensions be
Other data
| Title | STUDY OF DIRECT TUNNELING CURRENT THROUGH ULTRA-THIN GATE OXIDE MOSFET AND ITS EEFECT ON CMOS CIRCUITS | Authors | MOHAMED ATEF EL-SAYED | Keywords | STUDY OF DIRECT TUNNELING CURRENT THROUGH ULTRA-THIN GATE OXIDE MOSFET AND ITS EEFECT ON CMOS CIRCUITS | Issue Date | 2007 | Description | ABSTRACT CMOS technology dimensions are being scaled down to enhance device performance. Enhanced performance includes fast switching speed, low power dissipation and smaller area . MOSFET has suffered from various undesirable effects as its dimensions be |
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