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| Issue Date | Title | Author(s) |
| 2009 | ac conductivity and dielectric properties of amorphous Se80Te20−xGex chalcogenide glass film compositions | Hegab, N. A. ; Afifi, M.A.; Atyia, H.E.; Farid, A.S. |
| 2008 | Ac conductivity and dielectric properties of Ge20Se75In5 films | Hegab, N. A. ; Bekheet, A.E. |
| 28-Oct-2005 | AC conductivity and dielectric properties of Sb<inf>2</inf>Te<inf>3</inf> thin films | Farid, Ashgan ; Atyia, H. E.; Hegab, N. A. |
| 2009 | AC Conductivity and Dielectric Properties οf Amorphous Te42As36Ge10Si12Glass | Hegab, N. A. ; El-Mallah, H.M. |
| 2016 | Compositional Dependence of the Optical Properties of Amorphous Semiconducting Glass Se80Ge20−x Cd x (0 ≤ x ≤ 12 at.%) Thin Films | Hegab, N. A. ; Farid, A. S.; Afifi, M. A.; Alrebati, A. M.; A.M.Shakra |
| 2016 | Conduction mechanism and dielectric properties of a Se80Ge20−x Cd x (x = 0, 6 and 12 at.wt%) films | Shakra, Amira ; Farid, A. S.; Hegab, N. A. ; Afifi, M. A. |
| 2012 | Conduction mechanism and the dielectric relaxation process of a-Se75Te25−xGax (x=0, 5, 10 and 15atwt%) chalcogenide glasses | Yahia, I.S.; Hegab, N. A. ; AL-Ribaty, A.M.; A.M.Shakra |
| 2001 | Conduction mechanism in amorphous ln2 III X3 VI thin films | Hegab, N. A. ; A.E.Bekheet |
| 2000 | Conduction mechanism in the off state of thin Te48-y As30+y Ge10 Si12 films | Hegab, N. A. |
| 2006 | Conduction studies on amorphous InSbX3 (X = Te or Se) thin films | Hegab, N. A. ; H.E. Atyia |
| 2012 | Crystallization kinetics of a-Se75Te25−xGax (x=0, 5, 10 and 15 at wt %) glassy system | Fayek, S.A.; Hegab, N. A. ; Yahia, I.S.; AL-Ribaty, A.M.; A.M.Shakra |
| 11-Jun-2018 | DC electrical conductivity and switching phenomena of amorphous Te81Ge15Bi4 films | Afifi, M.A.; E. G. El-Metwally ; Mostfa, M.; Hejab, Naima |
| Dec-2014 | Determination and analysis of optical constants for Ge15Se60Bi25 thin films | H.e. Atyia; Hegab, N. A. |
| 2016 | Dielectric relaxation behavior and conduction mechanism of Te46As32Ge10Si12 films | Atyia, H.E.; Hegab, N. A. |
| 2007 | Dielectric studies of amorphous As45Te33Ge10Si12 films | Hegab, N. A. ; H.E. Atyia |
| 2009 | The effect of Ag addition on the optical properties of Se90Te10 films | Hegab, N. A. ; Afifi, M.A.; Atyia, H.E.; Sharaf, E.R.; Bekheet, A.E. |
| 1998 | Effect of annealing on the structural and electrical properties of ln2Te3 | Hegab, N. A. ; M.A.Afifi; A.A.El-shazly; A.E.Bekheet |
| 2000 | Effect of Sn content on the electrical and optical properties of Ge1−xSnxSe3 glasses | Fadel, M.; Sedeek, K.; Hegab, N. A. |
| 2014 | Electrical and Switching Phenomenon of Se80Ge20−x Cd x (0 ≤ x ≤ 12 at.%) Amorphous System | A.M.Shakra ; Afifi, M.A.; Hegab, N. A. ; Farid, A.S. |
| 2011 | Electrical and switching properties of Se85Te15−xSbx (0≤x≤6at.wt%) thin films | Fadel, M.; Hegab, N. A. ; Salem, A.M.; Farid, A.S.; I.S. Yahia |
