A.M.Shakra

amerahsanen@edu.asu.edu.eg

Interests: chalcogenide glasses ,thin films, electrical proprties, optical proprties, thermal analysis and switching phenomenon,
Internal ID: rp11312
  • 3 Scopus Citations

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Full Name
A.M.Shakra
 
Email
amerahsanen@edu.asu.edu.eg
 
Other emails
 

Results 1-20 of 23 (Search time: 0.0 seconds).

Issue DateTitleAuthor(s)
12005Electrical properties of amorphous Se<inf>70</inf>Ge<inf>30-</inf><inf>x</inf>M<inf>x</inf>system, where M represents silver, cadmium or leadA.M.Shakra 
22008KINETIC STUDY OF NON-ISOTHERMAL CRYSTALLIZATION IN SeGeX {X=0, Bi, In and Sb} CHALCOGENIDE GLASSESA.M.Shakra 
32008AC conductivity and dielectric properties of Se<inf>70</inf>Ge <inf>30-x</inf>M<inf>x</inf> {x=0&5 and M=Ag,Cd or Pb} amorphous filmsA.M.Shakra 
42009Structural and optical properties of SeGe and SeGeX (X = In, Sb and Bi) amorphous filmsA.M.Shakra 
52011Investigation of switching phenomenon of Se75Te25−xGax amorphous systemHegab, N. A. ; Yahia, I.S.; AL-Ribaty, A.M.; Bekheet, A.E.; A.M.Shakra 
62011Kinetics of non-isothermal crystallization of ternary Se<inf>85</inf>Te<inf>15-x</inf>Sb<inf>x</inf>glassy alloysA.M.Shakra 
72012Conduction mechanism and the dielectric relaxation process of a-Se75Te25−xGax (x=0, 5, 10 and 15atwt%) chalcogenide glassesYahia, I.S.; Hegab, N. A. ; AL-Ribaty, A.M.; A.M.Shakra 
82012Crystallization kinetics of a-Se75Te25−xGax (x=0, 5, 10 and 15 at wt %) glassy systemFayek, S.A.; Hegab, N. A. ; Yahia, I.S.; AL-Ribaty, A.M.; A.M.Shakra 
92013Effect of metal addition on DC and AC conductivity of a- Ge-Se filmsA.M.Shakra 
102014Photovoltaic response of dye-sensitized solar cell using 2′,7′-dichlorofluorescein as an organic dyeA.M.Shakra 
112014Electrical and Switching Phenomenon of Se80Ge20−x Cd x (0 ≤ x ≤ 12 at.%) Amorphous SystemA.M.Shakra ; Afifi, M.A.; Hegab, N. A. ; Farid, A.S.
122016Compositional Dependence of the Optical Properties  of Amorphous Semiconducting Glass Se80Ge20−x Cd x (0 ≤ x ≤ 12 at.%) Thin FilmsHegab, N. A. ; Farid, A. S.; Afifi, M. A.; Alrebati, A. M.; A.M.Shakra 
132016Electrical and switching behavior of quaternary defect chalcopyrite CdInGaSe<inf>4</inf>thin filmsA.M.Shakra 
142016Phase transformation and kinetic study of a Ga<inf>5</inf>Ge<inf>15</inf>Te<inf>80</inf>chalcogenide glass using the non-isothermal methodA.M.Shakra 
152016Conduction mechanism and dielectric properties of a Se80Ge20−x Cd x (x = 0, 6 and 12 at.wt%) filmsShakra, Amira ; Farid, A. S.; Hegab, N. A. ; Afifi, M. A.
162017Memory switching and the switching mechanism of Se<inf>60</inf>Ge<inf>40</inf>and Se<inf>60</inf>Ge<inf>36</inf>In<inf>4</inf>phase change alloysShakra, A. M. 
172018Influence of Ag, Cd or Pb Addition on Electrical and Dielectric Properties of Bulk Glassy Se-Ge.Journal of Electronic MaterialsShakra, A. M. 
182018Single oscillator parameters and optical properties for ZnSnSb<inf>2</inf>chalcopyrite in thin film formShakra, A. M. 
192018Determination of allowed transitions types and the optical parameters of Se{Ge{Ag chalcogenide lmsEur. Phys. J. B (2018) 91: 245Shakra, A. M. 
202018AC conduction and current voltage characteristics of (Sb2Se3)2 (Sb2Te3)1 thin filmsAbd ElWahabb, Ensherah ; Shakra, A. M. ; Farid, Ashgan