Hegab, N. A.

naimahejab@edu.asu.edu.eg
Interests: semiconductor,
Internal ID: rp11352
  • 107 Scopus Citations
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Hegab, N. A.
 
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Publications

Results 21-40 of 40 (Search time: 0.0 seconds).

Issue DateTitleAuthor(s)
212010Optical Properties of As36Te42Ge10Si12Thin FilmsHegab, N. A. ; El-Mallah, H.M.
222011Investigation of switching phenomenon of Se75Te25−xGax amorphous systemHegab, N. A. ; Yahia, I.S.; AL-Ribaty, A.M.; Bekheet, A.E.; A.M.Shakra 
232011Electrical and switching properties of Se85Te15−xSbx (0≤x≤6at.wt%) thin filmsFadel, M.; Hegab, N. A. ; Salem, A.M.; Farid, A.S.; I.S. Yahia 
242012Conduction mechanism and the dielectric relaxation process of a-Se75Te25−xGax (x=0, 5, 10 and 15atwt%) chalcogenide glassesYahia, I.S.; Hegab, N. A. ; AL-Ribaty, A.M.; A.M.Shakra 
252012Optical properties of As34Te44Ge10Si12 amorphous filmsHegab, N. A. ; El-Mallah, H.M.
262012Crystallization kinetics of a-Se75Te25−xGax (x=0, 5, 10 and 15 at wt %) glassy systemFayek, S.A.; Hegab, N. A. ; Yahia, I.S.; AL-Ribaty, A.M.; A.M.Shakra 
272013Influence of temperature and frequency on the AC conductivity and dielectric properties for Ge15Se60Bi25 amorphous filmsAtyia, H.E.; Hegab, N. A. ; Affi, M.A.; Ismail, M.I.M.
282013Electrical Conductivity and Dielectric Properties of Se85Te15−x Sb x (x = 0 at.%, 2 at.%, 4 at.%, and 6 at.%) Thin FilmsHegab, N. A. ; Fadel, M.; Yahia, I. S.; Salem, A. M.; Farid, A. S.
292014Electrical and Switching Phenomenon of Se80Ge20−x Cd x (0 ≤ x ≤ 12 at.%) Amorphous SystemA.M.Shakra ; Afifi, M.A.; Hegab, N. A. ; Farid, A.S.
30Dec-2014Determination and analysis of optical constants for Ge15Se60Bi25 thin filmsH.e. Atyia; Hegab, N. A. 
312016Dielectric relaxation behavior and conduction mechanism of Te46As32Ge10Si12 filmsAtyia, H.E.; Hegab, N. A. 
322016Compositional Dependence of the Optical Properties  of Amorphous Semiconducting Glass Se80Ge20−x Cd x (0 ≤ x ≤ 12 at.%) Thin FilmsHegab, N. A. ; Farid, A. S.; Afifi, M. A.; Alrebati, A. M.; A.M.Shakra 
332016Influence of thermal treatment on the optical aspects for Ge20In5Se75 filmsAtyia, H.E.; Hegab, N. A. 
342016Conduction mechanism and dielectric properties of a Se80Ge20−x Cd x (x = 0, 6 and 12 at.wt%) filmsShakra, Amira ; Farid, A. S.; Hegab, N. A. ; Afifi, M. A.
35Feb-2016Glass transition, Thermal Stability and Glass-Forming Tendacy of Se85Te10X5 (X = In, Sn) Chalcogenide GlassesA.S.Farid; Hegab, N. A. ; E.Abd El-Wahabb; H.Magdy
362017Glass transition kinetics aspects of amorphous Se60Ge15As25 and Se60Ge15Sn25 compositionsAtyia, H. E.; Hegab, N. A. ; Farid, A. S.
372018Memory switching of chalcogenide glass Se85 Te15 X5 (x=In, Sn) filmsAbd ElWahabb, Ensherah ; Magdy, H.; Hegab, N. A. ; A.S.Farid 
3811-Jun-2018DC electrical conductivity and switching phenomena of amorphous Te81Ge15Bi4 filmsAfifi, M.A.; E. G. El-Metwally ; Mostfa, M.; Hejab, Naima 
39Apr-2019The Intensity Dependency Of The Series Resistance And Other Parameters Of A Photovoltaic Silicon Solar Cell In Relation To Its PerformanceM.K.El-Adawi; M.M.El-Nahass; A.S.Farid; S.A.Shalaby; Hegab, N. A. 
40Jul-2019Physical, optical and dielectric properties of Se85Te10X5 (X=Sn, In) FilmsHejab, Naima ; A.S.Farid