Simulation of leakage current in nano-scale transistors
Yousry Ibrahim Elmaghraby;
Abstract
The electron wave nature in the nano scaled double-gate (DG) MOSFETs
is considered in calculating the gate leakage current based upon a full twodimensional
(2D) non-equilibrium Greens function (NEGF) analysis with
open boundary conditions (BC) at each
is considered in calculating the gate leakage current based upon a full twodimensional
(2D) non-equilibrium Greens function (NEGF) analysis with
open boundary conditions (BC) at each
Other data
| Title | Simulation of leakage current in nano-scale transistors | Other Titles | محاكاة تيار التسرب في الترانزستورات النانومترية | Authors | Yousry Ibrahim Elmaghraby | Keywords | Simulation of leakage current in nano-scale transistors | Issue Date | 2011 | Description | The electron wave nature in the nano scaled double-gate (DG) MOSFETs is considered in calculating the gate leakage current based upon a full twodimensional (2D) non-equilibrium Greens function (NEGF) analysis with open boundary conditions (BC) at each |
Attached Files
| File | Size | Format | |
|---|---|---|---|
| 106570MSc_Thesis_Yousry_Elmaghraby.pdf | 116.81 kB | Adobe PDF | View/Open |
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