Gamma-ray attenuation, fast neutron removal cross-section and build up factor of Cu2MnGe[S, Se, Te]4 semiconductor compounds: Novel approach

Abstract

This study is original work on semiconductor materials for gamma-ray detectors and fast neutron removal cross-section. This work is focused on the investigating of γ-ray interactions using Cu2MnGeS4, Cu2MnGeSe4, and Cu2MnGeTe4 semiconductor compounds. The photon interaction parameters (MAC, LAC, HVL, TVL, MEF, ACS, ECS, Zeff, Neff, Ceff, Zeq, EBF, and EABF) of the three different semiconductor compounds were graphically presented within 0.015–15 MeV energy range. A useful comparison with regular radiation shielding with standard glass materials with these samples has been developed. Cu2MnGeSe4 and Cu2MnGeTe4 semiconductor compounds have higher values of MAC and LAC compared with ordinary and steel magnetite concrete at the 0.1, 10, and 15 MeV. Interestingly, the checked semiconductor samples named Cu2MnGeSe4 andCu2MnGeTe4 have lower values for HVL and MFP than some commercial glasses used in radiation safety applications. At 15 KeV, Zeff values are 27.13, 32.11 and 39.21 and Neff values are 3.41, 2.71 and 2.47 × 1023 electron cm−3 for Cu2MnGeS4, Cu2MnGeSe4, and Cu2MnGeTe4 semiconductor compounds, respectively. Semiconductor compounds have better neutron protection features compared to RS-520, RS-253-G18, and RS-360 standard glassy materials. In a large energy range, the third sample, Cu2MnGeTe4, showed high sensing for gamma-rays and neutrons. These studies are very important for the manufacture of detectors for semiconductors used for X and gamma-ray measurements (detection of radiation).