Influence of post-deposition heat treatment on electrical transport properties of In2S3-buffered Cu(In,Ga)Se-2 cells
Abdelmaksoud, Heba; Igalson, M; Spiering, S;
Abstract
The electrical characteristics of Cu(In,Ga)Se2-based solar cells with In2S3 buffer were investigated. The effects of post-deposition annealing in helium or in air on current-voltage characteristics, net acceptor density profiles and admittance spectra were studied. Analysis of the current-voltage characteristics showed that interface recombination dominated transport in the as-deposited devices was reduced after annealing and partially replaced by bulk recombination. This was accompanied by a decrease in the saturation current and diode ideality factor. The influence of the heat treatment on the buffer/hetero-interface region as determined by capacitance measurements was minor. We conclude that a reduction in the interface states density and in the p + layer doping caused by the chemical modification of the hetero-interface region is the major source of the improvement. © 2012 Elsevier B.V.
Other data
Title | Influence of post-deposition heat treatment on electrical transport properties of In2S3-buffered Cu(In,Ga)Se-2 cells | Authors | Abdelmaksoud, Heba ; Igalson, M; Spiering, S | Keywords | CIGS;Buffer;Current transport;In2S3;Solar cell;Interface states;Admittance spectroscopy;SOLAR-CELLS;IN2S3;SPECTROSCOPY;LAYERS;ALCVD | Issue Date | 2013 | Publisher | ELSEVIER SCIENCE SA | Journal | Thin Solid Films | Volume | 535 | Start page | 158 | End page | 161 | ISSN | 0040-6090 | DOI | 10.1016/j.tsf.2012.11.076 | Scopus ID | 2-s2.0-84878183445 | Web of science ID | WOS:000318973600035 |
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