I.S. Yahia
isyahia@edu.asu.edu.eg
Department of Physics - Education
Interests: Nano-Materials, Thin-film, polymeric nanocomposites, Photocatalysis, Hydroxyapatite, graphene production/nanocompsoites,
Internal ID: rp11238
- 83 Scopus Citations

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I.S. Yahia
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isyahia@edu.asu.edu.eg
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Biography
Prof. Dr. (Ibrahim .S. Yahia) received his Ph.D. degree in semiconductor metal oxides in 2007 from Ain Shams University, Cairo, Egypt. In 2012, he was promoted to be an Associate Professor of semiconductor materials and devices. He worked at the Semiconductor Laboratory in the Department of Physics, Faculty of Education, Ain Shams University, for more than 23 years. His research interests include semiconductor materials and devices, nano-metal oxide thin films/powders, nano-metal chalcogenide thin films/powders, organic materials and characterization, organic Schottky diodes, and polymer materials characterization, grapheme oxide/nanocomposite, bio-ceramics. Device design includes diodes, photodiodes, and solar cells are the main target for our groups. Prof. Yahia built two important labs named (AFMOL in KKU, KSA) and (NLEBA in ASU, Egypt) to produce nanomaterials via cost-effective techniques. Prof. Yahia won three prizes. The first one was the State Incentive Award in Physics from the Academy of Science and Technology, Egypt, 2012. The second was the Award of Abdul Hamid Shoman for Young Arab Researchers in physics in 2013. In March 2017, he won the King Khalid University distinguished prize for teaching. He published 423 papers with h-index = 40, i10-index = 191, total citations = 6411, and RG score of 47.57.
Type
Subject
- 1 AC impedance | CdI -doped PVA 2 | Ionic conductivity | Polymeric composite films | UV–Vis–NIR properties
- 1 Amorphous chalcogenide semiconductors
- 1 CNTs and thermal analysis | Gas sensors | rGO | Volatile organic compounds
- 1 coplanar device
- 1 effect of temperature
- 1 Effect of temperature | Electrical activation energy | Memory device | Memory switching | Thermal model
- 1 Electrothermal model
- 1 I-V and C-V characteristics
- 1 I-VI compound
- 1 Memory switching
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Date issued
- 32 2000 - 2998
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