ELECTRON TRANSPORT PROPERTIES IN SEMICONDUCTOR AT HIGH ELECTRIC FIELDS
Basma Mohamed Osama El-Assy;
Abstract
The aim of this thesis is to study the transport properties of
GaAs, InP, GaInAs and InN such as the drift velocity, the drift mobility
and the average electron energy at high electric field using
ensemble Monte Carlo Simulation Technique. These transp
GaAs, InP, GaInAs and InN such as the drift velocity, the drift mobility
and the average electron energy at high electric field using
ensemble Monte Carlo Simulation Technique. These transp
Other data
| Title | ELECTRON TRANSPORT PROPERTIES IN SEMICONDUCTOR AT HIGH ELECTRIC FIELDS | Other Titles | الخصائص الانتقالية داخل أشباه الموصلات في المجالات الكهربائية العالية | Authors | Basma Mohamed Osama El-Assy | Keywords | ELECTRON TRANSPORT PROPERTIES IN SEMICONDUCTOR AT HIGH ELECTRIC FIELDS | Issue Date | 2006 | Description | The aim of this thesis is to study the transport properties of GaAs, InP, GaInAs and InN such as the drift velocity, the drift mobility and the average electron energy at high electric field using ensemble Monte Carlo Simulation Technique. These transp |
Attached Files
| File | Size | Format | |
|---|---|---|---|
| 103583Basma El Assy Master.pdf | 96.74 kB | Adobe PDF | View/Open |
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