New MOSFET Device for Precision Measurement of Microwave Signal Polarization

Abstract

A great attention has been recently given to the development and realization of precise MOSFET IC magnetic field detectors. This is referred to the remarkable •enhancements in device concepts and technology and because precision magnetic field detectors found wide field of applications. Many magnetic field detectors and sensors are in use and satisfying performance requirements. However, most are neither cost effective or reliable. Moreover, they are bulky, heavy and sophisticated. Also, they can't be integrated using MOSFET technology on a single chip. In this thesis, an accurate and efficient two-dimensional physical simulator is developed to analyze the operation and performance of MOS Magnetic Field Detector. The simulator is able to determine accurately the effect of externally applied magnetic field on the electrical characteristics of MOSFET. This is achieved by efficient coupling of the magnetic field equation with the transport equation, which describes the electrical behavior of the MOSFET transistor. The sensitivity of the detector for both de and ac magnetic field at different frequencies is investigated. Finally, we simulate the new proposed detector for magnetic field magnitude detection and orientation and we try to obtain high sensitivity and to see how this device can applicable for microwave measurements and what the main parameters are which affect the device performance in microwave area.