Design of a Multi-bit Memristor Based Nano Memories
Hagar Hossam El-din Abd Alaziz Ahmed Hendy;
Abstract
In this chapter, a novel window function is proposed to be used with fi t-growth based models to overcome their limitations in transient analysis. The advantages of the proposed modification are:
• It eliminates the limits on the gap thickness which cannot be measured accurately [44]. Alternatively, it uses the thickness of the oxide layer as the limiting factor. This layer can be characterized and controlled during fabrication.
• It eliminates the limits on the gap thickness which cannot be measured accurately [44]. Alternatively, it uses the thickness of the oxide layer as the limiting factor. This layer can be characterized and controlled during fabrication.
Other data
| Title | Design of a Multi-bit Memristor Based Nano Memories | Other Titles | (تصميم الممرستور كخلية متعددة البت )الذاكرة النانوية | Authors | Hagar Hossam El-din Abd Alaziz Ahmed Hendy | Issue Date | 2018 |
Attached Files
| File | Size | Format | |
|---|---|---|---|
| CC3013.pdf | 852.23 kB | Adobe PDF | View/Open |
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